SSFD4024 40v n-channel mosfet www.goodark.com page 1 of 4 rev.1.0 main product characteristics v dss 40v r ds (on) 30 mohm i d 12a features and benefits ? advanced trench mosfet process technology ? special designed for convertors and power controls ? ultra low on-resistance ? 175 operating temperature ? lead free product description it utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. absolute max rating parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 12 id @ tc = 100c continuous drain current, vgs @ 10v 12 idm pulsed drain current 30 a pd @tc = 25c power dissipation 20 w vgs gate-to-source voltage 20 v eas single pulse avalanche energy 22 mj iar avalanche current @ l=0.3mh 10 a tj tstg operating junction and storage temperature range -55 to + 175 c thermal resistance symbol characterizes value unit r jc junction-to-case 7.5 /w junction-to-ambient 30 /w r ja junction-to-ambient (pcb mounted, steady-state) 60 /w to-252 top view marking and pin assignment SSFD4024
SSFD4024 40v n-channel mosfet www.goodark.com page 2 of 4 rev.1.0 electrical characteristics @t a =25 unless otherwise specified parameter min. typ. max units conditions bvdss drain-to-source breakdown voltage 40 v vgs = 0v, id = 250a rds(on) static drain-to-source on-resistance 24 33 m vgs = 10v, id = 12a vgs(th) gate threshold voltage 1 3 v vds = vgs, id = 250a 1 vds = 40v, vgs = 0v idss drain-to-source leakage current 150 a vds = 40v, vgs = 0v, tj = 125c gate-to-source forward leakage 100 vgs = 20v igss gate-to-source reverse leakage -100 na vgs = -20v qg total gate charge 9.5 qgs gate-to-source charge 4.5 qgd gate-to-drain("miller") charge 1.5 nc id = 12a vds =20v vgs = 10v td(on) turn-on delay time 3.5 tr rise time 6 td(off) turn-off delay time 13.5 tf fall time 3.5 ns vdd = 20v id = 12a rg = 1.7 vgs = 10v ciss input capacitance 410 coss output capacitance 95 crss reverse transfer capacitance 35 pf vgs = 0v vds = 20v ? = 1.0mhz source-drain ratings and characteristics parameter min. typ. max units conditions is continuous source current (body diode) 12 a mosfet symbol showing the integral reverse p-n junction diode. vsd diode forward voltage 0.75 1.0 v tj = 25c, if = 1a, vdd = 20v di/dt = 100a/s trr reverse recovery time 23 ns qrr reverse recovery charge 18.5 nc tj = 25c, if = 12a, vdd = 20v di/dt = 100a/s ton forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld)
SSFD4024 40v n-channel mosfet www.goodark.com page 3 of 4 rev.1.0 notes: repetitive rating; pulse width limited by max. junction temperature. limited by tjmax, starting tj = 25c, l = 0. 3mh rg =50, ias = 82a, vgs =10v. part not recommended for use above this value. pulse width < 1.0ms; duty cycle<2%.
SSFD4024 40v n-channel mosfet www.goodark.com page 4 of 4 rev.1.0 to-252e-2-m package information notes 1. dimensions are inclusive of plating 2. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 3. dimension l is measured in gauge plane. 4. controlling dimension is millimeter; converted inch dimensions are not necessarily exact. dimensions in millimeters units: mm
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